• DocumentCode
    3630987
  • Title

    Origin of the low frequency type curve in Silicon-on-Sapphire MOS capacitors

  • Author

    Hiroshi Domyo;Karl Bertling;Tran Ho;Neal Kistler;George Imthurn;Michael Stuber;Aleksandar D. Rakic; Yew-Tong Yeow

  • Author_Institution
    School of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, QLD 4072, Brisbane, Australia
  • fYear
    2008
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    MOS capacitor C-V measurement is a standard tool for investigating the electrical properties of a wafer. This paper investigates the use of a novel MOS capacitor structure for use with thin film silicon-on-sapphire wafers in order to determine backs surface silicon-sapphire interface quality.
  • Keywords
    "Frequency","MOS capacitors","Silicon","Testing","Semiconductor films","Capacitance-voltage characteristics","CMOS technology","Australia","Electric variables measurement","Measurement standards"
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4244-2716-1
  • Electronic_ISBN
    2377-5505
  • Type

    conf

  • DOI
    10.1109/COMMAD.2008.4802108
  • Filename
    4802108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3630987