• DocumentCode
    3631126
  • Title

    Impurity-related photoluminescence from InGaN LED material

  • Author

    P.G. Eliseev;M. Osinski;B.S. Phillips; Pei-Chih Chiu;G. Mohs;B. Fluegel;H. Giessen;N. Peyghambarian

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    2
  • fYear
    1995
  • Firstpage
    104
  • Abstract
    Summary form only given. In this paper, we explain quantitatively the nature of the major emission band in Nichia LEDs. The experimental low-temperature (20 K) and room-temperature (RT) spectra were obtained by photoluminescence (PL). A broad impurity-related PL band, with an undulated envelope centered at 465 nm (2.67 eV), was observed at both low and room temperatures when the pump beam illuminated the active region.
  • Keywords
    "Photoluminescence","Light emitting diodes","Shape measurement","Temperature","Photonic integrated circuits","Gallium nitride","Chemical industry","Laser excitation","Materials science and technology","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
  • Print_ISBN
    0-7803-2450-1
  • Type

    conf

  • DOI
    10.1109/LEOS.1995.484618
  • Filename
    484618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631126