Title :
Rare-earth based alternative gate dielectrics for future integration in MOSFETs
Author :
J.M.J. Lopes;E. Durgun-Ozben;M. Roeckerath;U. Littmark;R. Luptak;St. Lenk;A. Besmehn;U. Breuer;J. Schubert;S. Mantl
Author_Institution :
Institute for Bio- and Nanosystems (IBN1-IT), Research Center Juelich, Germany
Abstract :
In this contribution, results on the structural and electrical properties of high-κ REScO3 (RE = La, Gd, Tb, Sm) and LaLuO3 amorphous thin films are presented. The study reveals that these oxides are potential candidates for future integration in MOSFETs. High dielectric constants up to 30 were measured for amorphous thin films of these materials, as well as low leakage current and low interface trap densities. Very promising results for transistors processed on SOI and sSOI substrates are also shown.
Keywords :
"MOSFETs","Dielectric thin films","Amorphous materials","High-K gate dielectrics","Density measurement","Current measurement","Dielectric measurements","Dielectric materials","Leakage current","Dielectric substrates"
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897548
