• DocumentCode
    3631218
  • Title

    InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region

  • Author

    J. Kovac;F. Uherek;A. Satka;J. Waclawek;J. Jakabovic;R. Srnanek;B. Rheinlander;V. Gottschalch;S. Hasenohrl;J. Novak;P. Barna;A. Barna;J. Wood

  • Author_Institution
    Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
  • fYear
    1996
  • Firstpage
    219
  • Lastpage
    222
  • Abstract
    Currently, resonant cavity enhanced (RCE) photodetectors have received a great deal of attention for applications of photoreceivers with wavelength-selective capabilities and higher bandwith efficiency product. In the present work, we report on the design, growth and properties of RCE PIN photodiodes for 1300 nm wavelength region using In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP bottom mirror overgrown by In/sub 0.5/3Ga/sub 0.47/As/InP PIN photodiode.
  • Keywords
    "Mirrors","Indium phosphide","PIN photodiodes","Photodetectors","Absorption","Physics","Resonance","Doping","Epitaxial growth","Microelectronics"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM ´96., Eighth International Conference on
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491976
  • Filename
    491976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631218