Title :
InAlGaAs-InGaAs-InP RCE pin photodiode 1300 nm wavelength region
Author :
J. Kovac;F. Uherek;A. Satka;J. Waclawek;J. Jakabovic;R. Srnanek;B. Rheinlander;V. Gottschalch;S. Hasenohrl;J. Novak;P. Barna;A. Barna;J. Wood
Author_Institution :
Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
Abstract :
Currently, resonant cavity enhanced (RCE) photodetectors have received a great deal of attention for applications of photoreceivers with wavelength-selective capabilities and higher bandwith efficiency product. In the present work, we report on the design, growth and properties of RCE PIN photodiodes for 1300 nm wavelength region using In/sub 0.52/Al/sub 0.21/Ga/sub 0.27/As/InP bottom mirror overgrown by In/sub 0.5/3Ga/sub 0.47/As/InP PIN photodiode.
Keywords :
"Mirrors","Indium phosphide","PIN photodiodes","Photodetectors","Absorption","Physics","Resonance","Doping","Epitaxial growth","Microelectronics"
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM ´96., Eighth International Conference on
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491976
