• DocumentCode
    3631293
  • Title

    Simulation of charge transport phenomena in the channel of deep submicron MOSFETs

  • Author

    A.C. Negoi;J. Zimmermann

  • Author_Institution
    Dept. of Electron. & Telecommun., Politehnic Univ. of Bucharest, Romania
  • fYear
    1995
  • Firstpage
    61
  • Lastpage
    64
  • Abstract
    This paper presents an approach of the charge transport phenomena simulation in the channel of a nMOSFET. The model given is based on the relaxation equations of the speed and energy of electrons. The looping phenomena on the output characteristics I/sub d/(V/sub ds/) is illustrated as a consequence of the response of the interface traps.
  • Keywords
    "MOSFETs","Electrons","Equations","Effective mass","Acceleration","Cutoff frequency","Kinetic energy","Lattices","Condition monitoring","Energy measurement"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS´95 Proceedings., 1995 International
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494864
  • Filename
    494864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631293