Deep energy levels in N-type silicon introduced by palladium diffusion

The results of a study carried out on N-type silicon diffused with palladium using DLTS method are reported. In the case of diffusion temperature 860/spl deg/C, diffusion time influence the deep levels related to Pd-induced defects. In the case of short-time diffusion (4 minutes) two significant energy levels were found, the level E/sub c/-0.22 eV related to Pd in substitutional positions and the level E/sub c/-0.37 eV related to Pd in interstitial positions. For longer diffusion time interstitial Pd transforms into substitutional positions in connection with the interstitial-substitutional mechanism of Pd diffusion and in the case of Pd diffusion for 20 minutes only one dominant level E/sub c/-0.22 eV was found. Energy levels of etching-induced surface defects are also reported.