Enhancement of electron mobility in 2D MODFET structures

Calculations of electron-polar optical phonon scattering rates in AlAs/GaAs two-dimensional quantum wells (2D QWs) with independent electron and phonon confinement are performed. It is shown that the electron-optical phonon scattering rate can be changed by designing the heterostructure. In a single heterostructure (analogous with a 2D MODFET channel) the scattering rate decreases (hence, the mobility increases) when a phonon wall (phonon-reflecting barrier transparent to electrons) is inserted into the electron QW.