Modeling of minority-carrier transport at silicon graded n-n/sup +/ junctions. II. Case study

In this paper, the theoretical model for determination of minority-carrier surface recombination velocity and excess hole concentration, developed previously [see ibid.], is applied to the p/sup +/nn/sup +/ diode, in order to study behaviour of these quantities along the nn/sup +/ structure. Consideration is extended up to the high injection levels, with emphasis on the behaviour of the excess carrier concentrations within the low-high junction. Calculation of the I-V curve is also provided.