DocumentCode :
3631418
Title :
Design of a high gain power amplifier using a bias dependent large signal MESFET model and the describing function technique
Author :
S. Munoz;J.L. Sebastian;J.D. Gallego
Author_Institution :
Fac. de Ciencias Fisicas, Univ. Complutense de Madrid, Spain
fYear :
1995
Firstpage :
455
Lastpage :
458
Abstract :
A MESFET microwave power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements. The analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis.
Keywords :
"Signal design","MESFETs","Equivalent circuits","Scattering parameters","Voltage","Capacitance","Frequency","Power amplifiers","Performance analysis","Performance gain"
Publisher :
ieee
Conference_Titel :
Signals, Systems, and Electronics, 1995. ISSSE ´95, Proceedings., 1995 URSI International Symposium on
Print_ISBN :
0-7803-2516-8
Type :
conf
DOI :
10.1109/ISSSE.1995.498030
Filename :
498030
Link To Document :
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