Design of a high gain power amplifier using a bias dependent large signal MESFET model and the describing function technique

A MESFET microwave power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements. The analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis.