DocumentCode
3631455
Title
ZrN as barrier film between Au and SiO/sub 2/: microstructural stability of the system
Author
N. Popovic;Z. Bogdanov;B. Goncic;M. Zlatanovic
Author_Institution
Atomic Phys. Lab., Inst. of Nucl. Sci., Belgrade, Yugoslavia
Volume
1
fYear
1995
Firstpage
73
Abstract
The microstructural stability of ZrN/Au structures sputtered onto oxidized Si substrates was studied. The analyses of surface morphology and in depth microstructural changes after thermal activation up to 500/spl deg/C, 30 min. were enabled by sequential low energy ion bombardment. The analysis was performed by SEM, STM, AES and ESCA methods. Formation of oxide on the upper surface of the system and micropore development in the gold film for vacuum annealing was analyzed. The best microstructural stability was obtained for ZrN/Au structures annealed in N/sub 2/ atmosphere.
Keywords
"Gold","Stability","Substrates","Annealing","Microstructure","Sputtering","Semiconductor films","Surface morphology","X-ray scattering","Atmosphere"
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500838
Filename
500838
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