DocumentCode
3631459
Title
Shallow impurities in a quantum well: hybridization aspects
Author
D. Tjapkin;B. Radenovic
Author_Institution
Fac. of Electr. Eng., Belgrade Univ., Serbia
Volume
1
fYear
1995
Firstpage
91
Abstract
In this paper we have analyzed the influence of hybridization of the localized donor state in a semiconductor quantum well with the first electron subband states using the Fano-Anderson model. The equations determining the corresponding Green´s functions are derived and a procedure for their solution is discussed. An analytical expression is obtained describing donor level shift under the influence of the hybridization.
Keywords
"Green´s function methods","Eigenvalues and eigenfunctions","Semiconductor impurities","Electrons","Equations","Molecular beam epitaxial growth","Wave functions","Semiconductor superlattices","Chemical vapor deposition","MOCVD"
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500842
Filename
500842
Link To Document