Title :
The effect of static dielectric constant on the band structure in heavily doped silicon
Author :
S. Zivanovic;S. Ristic;Z. Prijic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
This paper discusses dependence of the static dielectric constant on the impurity concentration and its influence on density of states behavior in n-type heavily doped silicon. Quantitative results of the calculations of the density of states and conduction and valence band shifts are presented for the doping concentration range 10/sup 17/-10/sup 21/cm/sup -3/.
Keywords :
"Dielectric constant","Silicon","Semiconductor impurities","Photonic band gap","Semiconductor devices","Temperature dependence","Semiconductor device doping","Bipolar transistors","Photovoltaic cells","Circuits"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500852
