• DocumentCode
    3631467
  • Title

    The effect of static dielectric constant on the band structure in heavily doped silicon

  • Author

    S. Zivanovic;S. Ristic;Z. Prijic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    141
  • Abstract
    This paper discusses dependence of the static dielectric constant on the impurity concentration and its influence on density of states behavior in n-type heavily doped silicon. Quantitative results of the calculations of the density of states and conduction and valence band shifts are presented for the doping concentration range 10/sup 17/-10/sup 21/cm/sup -3/.
  • Keywords
    "Dielectric constant","Silicon","Semiconductor impurities","Photonic band gap","Semiconductor devices","Temperature dependence","Semiconductor device doping","Bipolar transistors","Photovoltaic cells","Circuits"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500852
  • Filename
    500852
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631467