Effects of grain-boundary trapping-state energy distribution on the Fermi level position in thin polysilicon films

This paper gives the results of calculations of the critical dopant concentration for totally depletion of grains and the Fermi level position in polysilicon films with different energy distributions of grain boundary trapping states. The case is considered for which the trapping states are distributed according to the Gaussian distribution. In particular, the case of plasma hydrogenated polysilicon films, with exponentially distributed grain boundary trapping states, is analysed.