Title :
Determination of the surface states trap density in power VDMOSFETs using charge pumping technique
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
Analytical charge pumping models developed for the conventional MOSFETs are applied to VDMOSFET in order to calculate surface states trap density. The complete charge pumping mechanism in VDMOSFET is described, and its applicability is experimentally demonstrated on virgin and /spl gamma/-ray irradiated devices.
Keywords :
"Charge pumps","MOSFETs","Interface states","Substrates","Electron traps","Pulse measurements","Current measurement","Radiative recombination","Threshold voltage","Analytical models"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500875
