• DocumentCode
    3631480
  • Title

    Determination of the surface states trap density in power VDMOSFETs using charge pumping technique

  • Author

    P.M. Igic

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ., Serbia
  • Volume
    1
  • fYear
    1995
  • Firstpage
    255
  • Abstract
    Analytical charge pumping models developed for the conventional MOSFETs are applied to VDMOSFET in order to calculate surface states trap density. The complete charge pumping mechanism in VDMOSFET is described, and its applicability is experimentally demonstrated on virgin and /spl gamma/-ray irradiated devices.
  • Keywords
    "Charge pumps","MOSFETs","Interface states","Substrates","Electron traps","Pulse measurements","Current measurement","Radiative recombination","Threshold voltage","Analytical models"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500875
  • Filename
    500875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631480