DocumentCode :
3631482
Title :
Pre-breakdown electron trapping in irradiated and annealed oxides
Author :
B. Pesic;D. Manic;L. Zivkovic;N. Stojadinovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
1
fYear :
1995
Firstpage :
273
Abstract :
This paper persents a generic analysis of electron trapping process in irradiated and postirradiation annealed oxides subjected to Fowler-Nordheim constant injection. Based on the first order trapping kinetics, parameters of intrinsic traps, as well as traps generated by stress, are extracted. Also the trapping rates immediately prior to breakdown are evaluated. It is found that annealing applied after irradiation modifies the electron trapping properties.
Keywords :
"Electron traps","Annealing","Stress","Voltage","Electric breakdown","Silicon","MOS devices","Degradation","Plasma temperature","Electrodes"
Publisher :
ieee
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
Type :
conf
DOI :
10.1109/ICMEL.1995.500879
Filename :
500879
Link To Document :
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