Title :
Pre-breakdown electron trapping in irradiated and annealed oxides
Author :
B. Pesic;D. Manic;L. Zivkovic;N. Stojadinovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
This paper persents a generic analysis of electron trapping process in irradiated and postirradiation annealed oxides subjected to Fowler-Nordheim constant injection. Based on the first order trapping kinetics, parameters of intrinsic traps, as well as traps generated by stress, are extracted. Also the trapping rates immediately prior to breakdown are evaluated. It is found that annealing applied after irradiation modifies the electron trapping properties.
Keywords :
"Electron traps","Annealing","Stress","Voltage","Electric breakdown","Silicon","MOS devices","Degradation","Plasma temperature","Electrodes"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500879