DocumentCode
3631489
Title
Symbolic function extraction and fault modelling of MOS circuits
Author
P. Petkovic;D. Milovanovic;V. Litovski
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
2
fYear
1995
Firstpage
473
Abstract
This paper presents a new method for fault modelling of CMOS combinational circuits at the transistor level. Every transistor is replaced with a conductance controlled by the gate logic state. The specific advantage of the method is use of a symbolic simulator for circuit function extraction. This function is referred as the Transistor Logic Conductance Function (TLCF). Starting from a known TLCF a simple set of rules is used for output state determination. The method is suitable for multiple fault model generation thanks to the fact that only one symbolic analysis of a circuit is sufficient for modelling different stuck-open, stuck-short and stuck-at faults of a logic gate.
Keywords
"Circuit faults","Semiconductor device modeling","CMOS logic circuits","Logic circuits","Circuit testing","Logic gates","Circuit simulation","Voltage","Variable structure systems","Combinational circuits"
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500912
Filename
500912
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