Title :
Symbolic function extraction and fault modelling of MOS circuits
Author :
P. Petkovic;D. Milovanovic;V. Litovski
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
This paper presents a new method for fault modelling of CMOS combinational circuits at the transistor level. Every transistor is replaced with a conductance controlled by the gate logic state. The specific advantage of the method is use of a symbolic simulator for circuit function extraction. This function is referred as the Transistor Logic Conductance Function (TLCF). Starting from a known TLCF a simple set of rules is used for output state determination. The method is suitable for multiple fault model generation thanks to the fact that only one symbolic analysis of a circuit is sufficient for modelling different stuck-open, stuck-short and stuck-at faults of a logic gate.
Keywords :
"Circuit faults","Semiconductor device modeling","CMOS logic circuits","Logic circuits","Circuit testing","Logic gates","Circuit simulation","Voltage","Variable structure systems","Combinational circuits"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500912