DocumentCode
3631788
Title
Diffused spiral junction termination structure: modeling and realization
Author
D. Krizaj;S. Amon;G. Charitat
Author_Institution
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Slovenia
fYear
1996
Firstpage
247
Lastpage
250
Abstract
An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.
Keywords
"Spirals","Resistors","Anodes","Leakage current","Medical simulation","Cathodes","Electric breakdown","Design optimization","Doping","Voltage"
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1996. ISPSD ´96 Proceedings., 8th International Symposium on
ISSN
1063-6854
Print_ISBN
0-7803-3106-0
Type
conf
DOI
10.1109/ISPSD.1996.509492
Filename
509492
Link To Document