A 30-GHz triple-push oscillator on silicon for mm-wave applications

Methodologies for a manufacturable design, and layout optimization of voltage controlled oscillators in triple push architectures for mm-wave applications, are proposed. The techniques are applied in the design of a fully-monolithic 30GHz triple push oscillator in 130nm CMOS technology.The oscillator provides an output power up to 0dBm with a maximum fundamental harmonic suppression of −18.66dBc and second harmonic suppression better than −30dBc. To the authors´ knowledge, this is the first triple push oscillator on silicon and the highest levels of harmonic rejections reported for integrated triple-push oscillators.