• DocumentCode
    3632844
  • Title

    Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices

  • Author

    Ryszard Kisiel;Marek Guziewicz;Anna Piotrowska;Eliana Kaminska;Krystyna Golaszewska;Norbert Kwietniewski;Wojciech Paszkowicz;Karolina Pagowska;Renata Ratajczak;Anna Stonert

  • Author_Institution
    Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Poland
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400degC. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.
  • Keywords
    "Gold","Stability","Bonding","Ohmic contacts","Metallization","Wire","Silicon carbide","Rapid thermal annealing","Testing","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
  • ISSN
    2161-2528
  • Print_ISBN
    978-1-4244-4260-7
  • Electronic_ISBN
    2161-2064
  • Type

    conf

  • DOI
    10.1109/ISSE.2009.5207044
  • Filename
    5207044
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3632844