DocumentCode
3633271
Title
Behavior of various geometry MagFET structures
Author
Martin Daricek;Martin Donoval;Alexander Satka
Author_Institution
Department of Microelectronics Faculty of Electrical Engineering and Information Technology, STU Bratislava, Slovakia
fYear
2009
Firstpage
17
Lastpage
20
Abstract
This paper deal with characterization of various MagFET structures in alternating magnetic field in frequency range from 20 Hz to 5 kHz. 2D numerical simulation of MagFET structures has been used to investigate current density distribution and influence of MagFET geometry to the external magnetic field sensitivity. Rectangle- and sectorial-shaped structures of various dimensions were designed and fabricated in standard 1μm two metal CMOS technology. Fabricated MagFET devices were characterized for applications as a sensor of external magnetic fields. The measurement results show dependence of MagFETs external magnetic field sensitivity on structure geometry, dimensions and biasing conditions.
Keywords
"Magnetic fields","Magnetic sensors","Magnetic field measurement","CMOS technology","Intelligent sensors","Shape","Information geometry","Current density","Sensor phenomena and characterization","Sensor systems and applications"
Publisher
ieee
Conference_Titel
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Type
conf
DOI
10.1109/ECCTD.2009.5275146
Filename
5275146
Link To Document