Fluctuations of electrical characteristics of FinFET devices

FinFET devices are extensively investigated due to the prospects for application in the sub-100nm CMOS integrated circuits fabrication. Small size of the FinFETs and the properties of technological processes strongly influence their electrical characteristics. The random variations of the characteristics lead to a mismatch effect critical from the viewpoint of design and fabrication. In the paper different types of the variations of FinFET characteristics are discussed. The considerations are illustrated with measurement data of a series of devices and with distributions of the parameters extracted from these data. Possible effect of the parameter variability on digital cell parameters is analyzed.