Influence of MOSFET model form on boost converter characteristics at the steady state

In the paper boost converter characteristics at the steady state obtained with the use of MOSFET models of various complexity and accuracy are compared. The analyses were performed by SPICE. The dependencies of the converter output voltage, the watt-hour efficiency and the MOSFET inner temperature on the frequency and the pulse-duty factor of the MOSFET control signal as well as the load resistance are considered. The correctness of the calculation results was verified experimentally. The times of the analyses of the converter corresponding to the considered models of the MOS transistor are compared, too.