Title :
Design Method for UHF Class-E Power Amplifiers
Author :
Nestor D. Lopez;John Hoversten;Zoya Popovic
Abstract :
This paper describes a method for designing single-ended high-efficiency switched-mode class-E UHF power amplifiers. The design procedure consists of a modified load pull transistor characterization from which a power/efficiency metric is calculated. Results for four prototypes using different device technologies are presented in detail. Amplifiers with Si-LDMOS, SiC-MESFET, GaN-HEMT on a Si substrate, and GaN-HEMT on a SiC substrate produce power over 40W with power-added efficiency greater than 75% and gain between 13 dB and 17 dB.
Keywords :
"Design methodology","Power amplifiers","Switches","High power amplifiers","Impedance","Substrates","Microwave amplifiers","Frequency","Circuits","Voltage"
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
DOI :
10.1109/csics.2009.5315734
