• DocumentCode
    3633979
  • Title

    Design flow for a SiGe BiCMOS based power amplifier

  • Author

    Mladen Bozanic;Saurabh Sinha;Monuko du Plessis;Alexandru Muller

  • Author_Institution
    Department of Electrical, Electronic and Computer Engineering, University of Pretoria, South Africa
  • Volume
    1
  • fYear
    2009
  • Firstpage
    311
  • Lastpage
    314
  • Abstract
    This paper presents a streamlined design flow for an integrated power amplifier. For a given set of amplifier specifications and BiCMOS process parameters, a software routine computes passive component values for a Class-E or Class-F based power amplifier. The routine includes a matching network for standard impedance loads. Spiral inductor search algorithm is used to generate inductors with Q-factors optimised at a desired frequency. Operation of the software routine is demonstrated by simulations in Austriamicrosystems 0.35 µm single-supply process for the 10 dBm, 2.4 GHz power amplifier design.
  • Keywords
    "Silicon germanium","Germanium silicon alloys","BiCMOS integrated circuits","Power amplifiers","Inductors","Impedance","Spirals","Q factor","Frequency","Computational modeling"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2009. CAS 2009. International
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-4413-7
  • Electronic_ISBN
    2377-0678
  • Type

    conf

  • DOI
    10.1109/SMICND.2009.5336537
  • Filename
    5336537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3633979