DocumentCode
3634006
Title
Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity
Author
Maria Makarova;Yiyang Gong;Jelena Vu?kovi?;Sel?uk Yerci;Rui Li;Luca Dal Negro
Author_Institution
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
fYear
2009
Firstpage
220
Lastpage
222
Abstract
Light emission at 1.54 μm from Er-doped amorphous silicon nitride layer coupled to high quality factor photonic crystal resonators is studied. Resonances exhibit line-width narrowing with pump power, signifying differential gain in the material.
Keywords
"Silicon","Photonic crystals","Temperature","Erbium","Q factor","Crystalline materials","Refractive index","Resonance","Optical materials","Cryogenics"
Publisher
ieee
Conference_Titel
Group IV Photonics, 2009. GFP ´09. 6th IEEE International Conference on
ISSN
1949-2081
Print_ISBN
978-1-4244-4402-1
Electronic_ISBN
1949-209X
Type
conf
DOI
10.1109/GROUP4.2009.5338386
Filename
5338386
Link To Document