Efficiency Droop Reduction in InGaN LEDs by Alternating AlGaN Barriers With GaN Barriers

In InGaN-based light-emitting diodes (LEDs), some specific designs on the quantum barrier layers by alternating AlGaN barriers with GaN barriers are proposed. Compared with the original structures with GaN barriers or AlGaN barriers, the proposed structure shows significant improvement in internal quantum efficiency (IQE) and efficiency droop, due to the better hole injection/transportation and electron confinement of the multiquantum well active region, and accordingly suppressed electron leakage, which provides us a simple but highly effective approach for high-performance LED applications. Moreover, the simulation suggests that the IQE and power can be further enhanced without efficiency droop when our designed structure is with increasing Al composition because of the uniformly dispersed carriers, permitting more freedom for the optimization.