• DocumentCode
    3634580
  • Title

    Design considerations for integration of horizontal current bipolar transistor (HCBT) with 0.18 μm bulk CMOS technology

  • Author

    M. Koričić;T. Suligoj;H. Mochizuki;S. Morita;K. Shinomura;H. Imai

  • Author_Institution
    Department of Electronics, Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Horizontal Current Bipolar Transistor (HCBT) is the only bulk-silicon lateral bipolar transistor with state-of-the-art electrical performance published so far. Integration of the HCBT with a commercial 0.18 μm CMOS process has been demonstrated and yields a very low-cost BiCMOS technology platform suitable for wireless applications.
  • Keywords
    "CMOS technology","Bipolar transistors","CMOS process","Contacts","Silicon","Etching","Resists","Annealing","Protection","Electrons"
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS ´09. International
  • Print_ISBN
    978-1-4244-6030-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378007
  • Filename
    5378007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634580