Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

Ultra-thin body (UTB) double-gate MOSFETs are foreseen as a solution to scaling issues for sub-20 nm CMOS due to excellent immunity to short-channel effects (SCEs). Transport mechanisms in UTB devices have been extensively investigated over the past years [1–3]. Nevertheless, theoretical considerations have been limited only to (100)-oriented UTB single- (SG) or double-gate (DG) devices while the experimental results are available mostly for (100)- and (110)-oriented SG SOI [2,3]. Therefore, an investigation of mobility-behavior in (111)-oriented UTB DG MOSFETs is neccessary, especially due to promising results of UTB FinFETs fabricated on (110) wafers with (111) active sidewalls [4].