• DocumentCode
    3634582
  • Title

    Reliable procedure for electrical characterization of MOS-based devices

  • Author

    J. Dobeš;V. Paňko;L. Pospíšil

  • Author_Institution
    Czech Technical University in Prague, Department of Radio Engineering, Czech Republic
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Contemporary BSIM- and EKV-type MOSFET models are very complicated. Therefore, their identification is a quite difficult task from both algorithmic and numeric points of view. In the paper, we outline several modifications of a classical procedure which enable reliable identifications of various types of these models.
  • Keywords
    MOSFET circuits
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS ´09. International
  • Print_ISBN
    978-1-4244-6030-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378104
  • Filename
    5378104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634582