Title :
Development of (λ∼9.4µm) GaAs-based quantum cascade lasers
Author :
Kamil Kosiel;Anna Szerling;Piotr Karbownik;Justyna Kubacka-Traczyk;Emilia Pruszyńska-Karbownik;Artur Trajnerowicz;Maciej Bugajski
Author_Institution :
Institute of Electron Technology, Al.Lotnikow 32/46, 02-668 Warszawa, Poland
Abstract :
The development of (λ˜9.4μm) GaAs-based quantum cascade lasers (QCLs) operating over 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme of Page et al.. The QCL GaAs/Al0.45Ga0.55As heterostructures were grown by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and Si3N4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. Optical and electrical properties of resulting devices are presented and discussed.
Keywords :
"Quantum cascade lasers","Optical waveguides","Optical design","Gallium arsenide","Solids","Waveguide lasers","Wet etching","Dielectrics and electrical insulation","Plasmons","Absorption"
Conference_Titel :
Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
Print_ISBN :
978-1-4244-3848-8
DOI :
10.1109/TERAMIR.2009.5379636
