DocumentCode
3634683
Title
The optical properties of hafnium oxide prepared by the pulsed laser deposition
Author
P. Płóciennik;A. Zawadzka;Z. Łukasiak;K. Bartkiewicz;A. Korcala
Author_Institution
Institute of Physics, N. Copernicus University, Grudziadzka 5, PL 87-100 Torun, Poland
fYear
2009
Firstpage
1
Lastpage
1
Abstract
Thin films of hafnium oxide (HfO2 ) have been grown by PLD method on transparent quartz substrates. The HfO2 target used in our experiment was made by pressing HfO2 powder. A XeCl excimer laser (EXC 150, ESTLA, 308 nm in wavelength, 20 ns in pulse width) running at 10 Hz with an average pulse energy of about 200 mJ was used. The films were characterized using X-ray diffraction. The films were amorphous, stoichiometric, and transparent down to a wavelength of 300 nm. Optical properties of the films (refractive index, the absorption index and the bandgap) were investigated by transmittance in the ultraviolet, visible and near infrared range and photoluminescence spectroscopy. We measure the photoluminescence spectra and dynamics of luminescence process.
Keywords
"Pulsed laser deposition","Hafnium oxide","Optical pulses","Optical films","Optical refraction","Optical variables control","Space vector pulse width modulation","Photoluminescence","Transistors","Pressing"
Publisher
ieee
Conference_Titel
ICTON Mediterranean Winter Conference,2009. ICTON-MW 2009. 3rd
Print_ISBN
978-1-4244-5745-8
Type
conf
DOI
10.1109/ICTONMW.2009.5385612
Filename
5385612
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