• DocumentCode
    3634685
  • Title

    Temperature dependent photoluminescence process in ZnO thin films grown on quartz by sol-gel method

  • Author

    A. Zawadzka;P. Pl?ciennik;Z. Lukasiak;K. Bartkiewicz;A. Korcala

  • Author_Institution
    Institute of Physics, N. Copernicus University, Grudzi?dzka 5, PL 87-100 Toru?, Poland
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The optical properties of ZnO thin films grown by sol-gel method on quartz wafers were studied using photoluminescence measurements for optical properties. The structural properties of the ZnO thin films were carried out using X-ray method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. A strong dependence of the films structure, the crystalline quality and the optical properties was also observed.
  • Keywords
    "Temperature dependence","Photoluminescence","Zinc oxide","Transistors","Optical films","Excitons","Annealing","Crystallization","Optical sensors","Temperature distribution"
  • Publisher
    ieee
  • Conference_Titel
    ICTON Mediterranean Winter Conference,2009. ICTON-MW 2009. 3rd
  • Print_ISBN
    978-1-4244-5745-8
  • Type

    conf

  • DOI
    10.1109/ICTONMW.2009.5385623
  • Filename
    5385623