Inclusion of direct tunneling gate current in the Symmetric Doped Double Gate MOSFETs Model

The gate current present in double-gate fully depleted MOSFETs can significantly contribute to the channel current measured in these devices. For this reason, models must take account of this effect in order to represent correctly the behavior of the devices. In this paper, we report a complementation to the symmetric doped double gate model for MOSFETs, by including the presence of gate tunneling current. Gate current is expressed in all the operation regions, using only one equation. Agreement observed between modeled and experimental curves in inversion, depletion and accumulation region, as well as for transistors with different geometry was excellent.