DocumentCode
3634699
Title
Characterization of PdO films for water vapour sensing
Author
O. Garc?a-Serrano;R. Pe?a-Sierra;G. Romero-Paredes Rubio;C. P?rez-Bautista
Author_Institution
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City, Mexico
fYear
2009
Firstpage
1
Lastpage
5
Abstract
The functionality of interdigitated gold/aluminum electrodes on PdO films for water vapor (WV) sensing was studied. The characterization of the structure Au/Al/PdO/Al/Au was done at different temperatures introducing WV pulses in the test chamber under a continuous flow of N2 to produce the desired moisture conditions. PdO films were obtained by thermal oxidation of Pd films at 650?C in air atmosphere. The Pd films were deposited by the electroless process on silicon (Si) substrates. The development of Pd/Si structures is important because it can be integrated with the microelectronic technology. Nanometric and micrometric thickness PdO films were studied. The electrical conduction limiting mechanisms of the Pd and PdO films were also determined. The response time, recovery time, and the sensitivity of structures was characterized in controlled humidity conditions. It was found that the response characteristics depend on the initial humidity condition of the PdO surface. When the structures were stored in environmental conditions the best operating parameters were observed. In contrast, when the structures were stored in dry atmosphere, the response resulted unstable with variations in the signal during extended measurement periods.
Keywords
"Gold","Atmosphere","Humidity","Aluminum","Electrodes","Temperature sensors","Testing","Moisture","Oxidation","Semiconductor films"
Publisher
ieee
Conference_Titel
Electrical Engineering, Computing Science and Automatic Control,CCE,2009 6th International Conference on
Print_ISBN
978-1-4244-4688-9
Type
conf
DOI
10.1109/ICEEE.2009.5393450
Filename
5393450
Link To Document