• DocumentCode
    3634707
  • Title

    The nonlinear compact thermal model of power MOS transistors

  • Author

    Krzysztof Górecki;Janusz Zarębski

  • Author_Institution
    Department of Marine Electronics, Gdynia Maritime University, Poland
  • fYear
    2008
  • Firstpage
    196
  • Lastpage
    199
  • Abstract
    In the paper a new nonlinear compact thermal model of power MOS transistors based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the trench MOS transistor MTD20N06V at its various cooling conditions.
  • Keywords
    "MOSFETs","Thermal resistance","Semiconductor devices","Temperature dependence","Impedance","Cooling","Microscopy","Convolution","Microelectronics","Parameter estimation"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. ICM 2008. International Conference on
  • ISSN
    2159-1660
  • Print_ISBN
    978-1-4244-2369-9
  • Electronic_ISBN
    2159-1679
  • Type

    conf

  • DOI
    10.1109/ICM.2008.5393830
  • Filename
    5393830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634707