Title :
On the ge-content dependent noise current in Si/SiGe MQW photodetector
Author :
Mukul K Das;N. R. Das
Author_Institution :
Dept. of Electronics & Instrumentation, ISM, Dhanbad, India
Abstract :
In the present paper, noise analysis of a resonant-cavity-enhanced Si/SiGe/Si p-i-n multiple quantum well photodetector has been carried out considering the effects of material parameters of SiGe and carrier trapping at heterointerfaces. Effect of Ge-content and applied bias on the signal to noise ratio have been investigated using numerical simulation.
Keywords :
"Silicon germanium","Germanium silicon alloys","Quantum well devices","Photodetectors","Optical noise","Background noise","Signal to noise ratio","Noise generators","Signal generators","Acoustical engineering"
Conference_Titel :
Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
Print_ISBN :
978-1-4244-5073-2
