Title :
Behavior of Bipolar and MOSFET transistors used in power stages of a controlled current amplifier
Author :
Radu Arsinte;Dorin Petreuş
Author_Institution :
Technical University of Cluj-Napoca /Communication Department, Str. Gh. Baritiu 26-28, 400027, Romania
Abstract :
The paper presents a comparative analysis of power efficiency and speed for different solutions of driving inductive loads. The main application is a power stages in special CRT display systems, requiring high efficiency, low rise and fall times for the current (less than 1 ?s for full scale current variation - 2 App). The paper analyzes a controlled (hybrid) main bridge topology, implemented both in Bipolar and MOS technologies for the final stages. The results for simulation of the theoretical and optimized circuits are presented.
Keywords :
"MOSFET circuits","Power MOSFET","Power amplifiers","Cathode ray tubes","Bridge circuits","Pulse amplifiers","Signal design","Coils","Pulse circuits","Electronics packaging"
Conference_Titel :
Design and Technology of Electronics Packages, (SIITME) 2009 15th International Symposium for
Print_ISBN :
978-1-4244-5132-6
DOI :
10.1109/SIITME.2009.5407366
