DocumentCode
3634893
Title
Lifetime and performance of InGaAsP and InGaAs absorbers for low bandgap tandem solar cells
Author
B.E. Sağol;N. Szabó;H. Döscher;U. Seidel;C. Höhn;K. Schwarzburg;T. Hannappel
Author_Institution
Helmholtz-Zentrum Berlin fur Materialien und Energie, Glienicker Str. 100, 14109, Germany
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
1090
Lastpage
1093
Abstract
Time resolved photoluminescence (TRPL) measurements were used to evaluate the lifetimes of the low bandgap absorber materials InGaAsP (1.03 eV) and InGaAs (0.73 eV) embedded between InP barriers. A low bandgap tandem solar cell based on these absorber materials has been developed. The cell is designed to work below an InGaP / GaAs high bandgap tandem solar cell. Tandem solar cells grown with these absorber materials reached efficiencies above 10% (in-house) below a 4-?m-thick GaAs filter under 35 suns concentration.
Keywords
"Indium gallium arsenide","Photonic band gap","Photovoltaic cells","Substrates","Conductivity","Epitaxial growth","Conductive films","Glass","X-ray scattering","Molecular beam epitaxial growth"
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Type
conf
DOI
10.1109/PVSC.2009.5411209
Filename
5411209
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