Self organized nanostructures of vapor phase grown CuGaS2 thin films

Thin films of nanocrystalline CuGaS₂ chalcopyrites have been prepared by chemical vapor transport (CVT) using elements of Cu, Ga, and S with iodine as the transporting agent. Crystalline layers of CuGaS₂ have been grown using various iodine concentrations but with constant source materials, growth zones temperatures and growth durations. The films were grown onto sapphire (Al₂O₃) substrates. The deposits obtained were nanostructures of CuGaS₂ thin films and they were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray analysis (EDAX), transmission electron microscopy (TEM), selected area electron diffraction (SAED), glancing angle X-ray diffraction (GAXRD), X-ray rocking curve, optical, Raman spectroscopy and by photoluminescence (PL) measurements. As-grown different iodine concentration CuGaS₂ nanocrystalline thin films have shown p-type conductivity.