• DocumentCode
    3634988
  • Title

    64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology

  • Author

    Gang Liu;A. Çagri Ulusoy;Andreas Trasser;Hermann Schumacher

  • Author_Institution
    Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Germany
  • fYear
    2010
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ?m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors´ knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.
  • Keywords
    "Voltage-controlled oscillators","Frequency","Power generation","Tuning","Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Circuits","Varactors","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
  • Print_ISBN
    978-1-4244-5456-3
  • Type

    conf

  • DOI
    10.1109/SMIC.2010.5422845
  • Filename
    5422845