DocumentCode :
3635008
Title :
Influence of cooling conditions on DC characteristics of the power MOS transistor IRF840
Author :
Janusz Zarębski;Krzysztof Górecki
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics, Morska Str. 83, 81-225 Gdynia, Poland
fYear :
2008
Firstpage :
12
Lastpage :
15
Abstract :
In this paper some results of measurements of the dc characteristics of the power MOSFET IRF840 are presented. These characteristics were measured for ideal and real cooling conditions. The influence of selfheating on the output and transfer characteristics of the investigated device are shown and discussed.
Keywords :
"Transistors","Heating","Voltage measurement","Temperature measurement","Temperature","Power measurement","Current measurement"
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science, 2008 Proceedings of International Conference on
Print_ISBN :
978-966-553-678-9
Type :
conf
Filename :
5423593
Link To Document :
بازگشت