DocumentCode :
3635138
Title :
The efficient simulation of point defects diffusion by an adaptive multigrid method
Author :
D. Pantic;S. Mijalkovic;N. Stojadinovic
Author_Institution :
Faculty of Electronic Engineering, University of Ni?, 18000 Ni?, Yugoslavia
fYear :
1992
Firstpage :
789
Lastpage :
792
Abstract :
The central goal of this paper is to demonstrate the efficiency of adaptive multilevel numerical method based on full multigrid algorithm for the simulation of point defects diffusion. This numerical approach is implemented in process simulator MUSIC [1] and it is applied for the simulation of interstitials and vacancies diffusion during the local oxidation process.
Keywords :
"Multigrid methods","Silicon","Multiple signal classification","Oxidation","Impurities","Equations","Computational modeling","Grid computing","Microelectronics","Semiconductor devices"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC ´92. 22nd European
Print_ISBN :
0-444-89478-0
Type :
conf
Filename :
5435409
Link To Document :
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