DocumentCode :
3635144
Title :
SAW transduction technique for GaAs microelectronics compatible acoustoelectronic devices
Author :
R. Miskinis;P. Rutkowski
Author_Institution :
Institute of Semiconductor Physics, A.Go?stauto 11, 2600 Vilnius, Lithuania
fYear :
1993
Firstpage :
663
Lastpage :
666
Abstract :
Performance of the surface acoustic wave (SAW) interdigital transducer (IDT) with doubled Al electrodes fabricated on GaAs wafers with submicrometre n-GaAs epitaxial layers has been investigated. Novel modes of linear as well as nonlinear operation of the transducer has been observed. The operation of electronic controllable SAW devices has been demonstrated which confirms possibility of creation of complex integrated circuits with acoustic and electron devices.
Keywords :
"Surface acoustic waves","Gallium arsenide","Microelectronics","Surface acoustic wave devices","Acoustic transducers","Acoustic waves","Electrodes","Epitaxial layers","Acoustic devices","Electron devices"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC ´93. 23rd European
Print_ISBN :
2-86332-135-8
Type :
conf
Filename :
5435584
Link To Document :
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