Title :
Hydrodynamic Modeling of Transport and Noise Spectra in n+nn+ Semiconductor Structures
Author :
L. Reggiani;P. Shiktorov;V. Gruzinskis;E. Starikov;L. Varani;T. Gonzalez;M.J. Martin;D. Pardo
Author_Institution :
Istituto Nazionale di Fisica della Materia, Dipartimento di Scienza dei Materiali, Universit? di Lecce, Via Arnesano, 73100 Lecce, Italy
Abstract :
In the framework of the velocity and energy conservation equations a direct modeling of the Green-function is used to calculate small-signal and noise characteristics of micron and submicron n+nn+ GaAs and Si structures. The method enables one to carry out a space and frequency analysis of various phenomena, such as drift-diffusion processes, velocity overshoot, negative differential conductivity, transit-time and plasma effects, etc.
Keywords :
"Hydrodynamics","Semiconductor device noise","Voltage","Frequency","High definition video","Circuit noise","Impedance","Equations","Gallium arsenide","Plasma measurements"
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
