• DocumentCode
    3635166
  • Title

    Hydrodynamic Modeling of Transport and Noise Spectra in n+nn+ Semiconductor Structures

  • Author

    L. Reggiani;P. Shiktorov;V. Gruzinskis;E. Starikov;L. Varani;T. Gonzalez;M.J. Martin;D. Pardo

  • Author_Institution
    Istituto Nazionale di Fisica della Materia, Dipartimento di Scienza dei Materiali, Universit? di Lecce, Via Arnesano, 73100 Lecce, Italy
  • fYear
    1996
  • Firstpage
    295
  • Lastpage
    298
  • Abstract
    In the framework of the velocity and energy conservation equations a direct modeling of the Green-function is used to calculate small-signal and noise characteristics of micron and submicron n+nn+ GaAs and Si structures. The method enables one to carry out a space and frequency analysis of various phenomena, such as drift-diffusion processes, velocity overshoot, negative differential conductivity, transit-time and plasma effects, etc.
  • Keywords
    "Hydrodynamics","Semiconductor device noise","Voltage","Frequency","High definition video","Circuit noise","Impedance","Equations","Gallium arsenide","Plasma measurements"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3635166