DocumentCode
3635167
Title
Numerical simulation of MOS devices with non-degenerate gate
Author
Predrag Habas;Siegfried Selberherr
Author_Institution
Institute for Microelectronics, Gu?hausstrasse 27-29, 1040 Vienna, Austria
fYear
1990
Firstpage
161
Lastpage
164
Abstract
In order to analyze implanted polysilicon-gate devices our MOS-device simulator MINIMOS has been extended to solve the basic semiconductor equations also in the poly-gate area self-consistently. Heavy doping effects in the gate as well as surface charge at the gate/oxide interface have been taken into account. The impact of some technological parameters related to the poly-gate effect on MOS-device performance is studied.
Keywords
"Numerical simulation","MOS devices","Chemical technology","Impurities","Equations","Chemical analysis","Chemical processes","Boron","Analytical models","Annealing"
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC ´90. 20th European
Print_ISBN
0-7503-0065-5
Type
conf
Filename
5436423
Link To Document