• DocumentCode
    3635168
  • Title

    Investigation of the Al-Ultrathin SiO2-Si System by Comparison of Theoretical and Experimental Current-Voltage Characteristics

  • Author

    Bogdan Majkusiak;Andrzej Jakubowski;Alfred Swit

  • Author_Institution
    Institute of Electron Technology, Technical University of Warsaw, Koszykowa 75, 00-662 Warsaw, Poland
  • fYear
    1987
  • Firstpage
    683
  • Lastpage
    686
  • Abstract
    Parameters of the Al-SiO2-Si(n) system with oxide thickness in the range from 2.5 nm to 4.5 nm are determined by fitting theoretical to expe-rimental current-voltage characteristics. The Si-SiO2 barrier height decreases while the electron effective mass in SiO2 and the oxide effective charge increase with decreasing the oxide thickness.
  • Keywords
    "Oxidation","Current-voltage characteristics","Electrons","Semiconductor diodes","Electrodes","MOSFETs","Lithography","Semiconductor device modeling","Dielectrics and electrical insulation","Effective mass"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC ´87. 17th European
  • Print_ISBN
    0-444-70477-9
  • Type

    conf

  • Filename
    5436736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3635168