DocumentCode
3635488
Title
Surface preparation for gallium nitride thick layers deposition by HVPE
Author
Joanna Prażmowska;Adam Szyszka;Ryszard Korbutowicz;Regina Paszkiewicz;Jaroslav Kovač;Rudolf Srnanek;Marek Tłaczała
Author_Institution
Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Str. 11/17, 50-372, Poland
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
69
Lastpage
71
Abstract
Low-temperature gallium nitride buffer layers (LT-GaN) deposition preceded growth of high temperature gallium nitride (HT-GaN) thick layers. Buffers and thick layers were deposited on (0001) sapphire substrates by Hydride Vapor Phase Epitaxy (HVPE). Before nucleation layer deposition sapphire substrates were chemically and thermally treated in various ways. Substrate surface morphology was examined by Atomic Force Microscopy (AFM). Properties of GaN layers were investigated by AFM, Photoluminescence (PL), and micro-Raman measurements.
Keywords
"III-V semiconductor materials","Gallium nitride","Substrates","Surface morphology","Atomic force microscopy","Buffer layers","Temperature","Epitaxial growth","Chemicals","Surface treatment"
Publisher
ieee
Conference_Titel
Students and Young Scientists Workshop "Photonics and Microsystems", 2009 International
ISSN
1939-4381
Print_ISBN
978-1-4244-4304-8
Type
conf
DOI
10.1109/STYSW.2009.5470298
Filename
5470298
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