Switching losses of IGBTs under zero-voltage and zero-current switching

Turn-off switching losses of punch-through (PT) and nonpunch-through (NPT) IGBTs under hard switching (HS) and zero-voltage switching (ZVS) are presented and evaluated at 25/spl deg/C, 75/spl deg/C and 125/spl deg/C. A comparison between PT and NPT devices based on their internal device characteristics is given for HS and ZVS. The low emitter efficiency NPT IGBTs used in this paper have smaller switching losses under HS and ZVS at 125/spl deg/C than PT devices. Zero-current switching (ZCS) techniques are also evaluated for both IGBT structures. PT IGBTs are found to have lower turn-off losses than NPT IGBTs.