Title :
Study of leakage mechanism and trap density in porous low-k materials
Author :
Gianni Giai Gischia;Kristof Croes;Guido Groeseneken;Zsolt T?kei;Valery Afanas´ev;Larry Zhao
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract :
The field and temperature dependence of the leakage current of low-k material is studied by using planar capacitors. First it is shown that our planar capacitors are suitable test vehicles to analyze the intrinsic properties of low-k materials. Then an evaluation of the trap density of the investigated low-k material is performed. Eventually different models such as Poole-Frenkel emission, Schottky emission and trap-assisted Fowler-Nordheim tunneling are analyzed in a temperature range from 80 K to 473 K and in a field range from 4.2 MV/cm to 6.6 MV/cm. It is found that Poole-Frenkel emission and Schottky emission do not fit the experimental data, whereas trap-assisted Fowler-Nordheim tunneling exhibits an adequate match between the extracted parameters and the theoretical predictions.
Keywords :
"Dielectric materials","Capacitors","Leakage current","Voltage","Materials testing","Performance evaluation","Tunneling","Copper","Dielectric substrates","Temperature dependence"
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Print_ISBN :
978-1-4244-5430-3
Electronic_ISBN :
1938-1891
DOI :
10.1109/IRPS.2010.5488773