DocumentCode
3636077
Title
Influence of different dopants on physical properties of ZnO for photovoltaic applications
Author
M. Netrvalov?;I. Novotn?;V. Tvaro?ek;L. Pru??kov?;P. ?utta
Author_Institution
Department of Materials & Technology, New Technologies -Research Centre, University of West Bohemia, Univerzitni 8, 30614 Plzen, Czech Republic
fYear
2010
fDate
5/1/2010 12:00:00 AM
Firstpage
181
Lastpage
184
Abstract
The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed.
Keywords
"Zinc oxide","Photovoltaic systems","Solar power generation","Optical films","Optical refraction","Optical variables control","Crystalline materials","Optical materials","Aluminum","Photonic band gap"
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490503
Filename
5490503
Link To Document