Title :
Influence of different dopants on physical properties of ZnO for photovoltaic applications
Author :
M. Netrvalov?;I. Novotn?;V. Tvaro?ek;L. Pru??kov?;P. ?utta
Author_Institution :
Department of Materials & Technology, New Technologies -Research Centre, University of West Bohemia, Univerzitni 8, 30614 Plzen, Czech Republic
fDate :
5/1/2010 12:00:00 AM
Abstract :
The paper deals with influence of aluminum, gallium and scandium as dopants on structure, electrical and optical properties of zinc oxide (ZnO) thin films as a material suitable for photovoltaic applications. Mainly optical (integral transmittance, optical band-gap energy and refractive index), structural (biaxial lattice stress, micro-strains and crystallite size) and electrical (resistivity) properties were studied. Comparison between the physical properties of the materials with different dopant elements was performed.
Keywords :
"Zinc oxide","Photovoltaic systems","Solar power generation","Optical films","Optical refraction","Optical variables control","Crystalline materials","Optical materials","Aluminum","Photonic band gap"
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490503
